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oH V SC AV ER OM AI SIO PL LA N IA BL S NT E
TISP4290J3BJ THRU TISP4395J3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
*R
TISP4xxxJ3BJ Overvoltage Protector Series
Ion-Implanted Breakdown Region -Precise and Stable Voltage -Low Voltage Overshoot Under Surge Designed for Transformer Center Tap (Ground Return) Overvoltage Protection -Enables GR-1089-CORE Compliance -High Holding Current Allows Protection of Data Lines with d.c. Power Feed Can be Used to Protect Rugged Modems Designed for Exposed Applications Exceeding TIA-968-A
VDRM V TISP4290J3BJ TISP4350J3BJ TISP4395J3BJ 220 275 320 V(BO) V 290 350 395
R
SD4XAp
SMB Package (Top View)
R
T
MDXXBGI
Device Symbol
T
Device Name
Rated for International Surge Wave Shapes
Wave Shape 2/10 8/20 10/160 10/700 10/560 10/1000 Standard GR-1089-CORE IEC 61000-4-5 TIA-968-A (FCC Part 68) ITU-T K.20/21/45 TIA-968-A (FCC Part 68) GR-1089-CORE IPPSM A 1000 800 400 350 250 200
............................................ UL Recognized Components
Description
The range of TISP4xxxJ3BJ devices are designed to limit overvoltages on telecom lines. The TISP4xxxJ3BJ is primarily designed to address GR-1089-CORE compliance on data transmission lines with d.c. power feeding. When overvoltage protection is applied to transformer coupled lines from the transformer center tap to ground, the total ground return current can be 200 A, 10/1000 and 1000 A, 2/10. The high 150 mA holding current is set above common d.c. feed system levels to allow the TISP4xxxJ3BJ to reset following a disturbance. These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above VDRM are limited and will not exceed the breakover voltage, V(BO) , level. If sufficient current flows due to the overvoltage, the device switches into a low voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the holding current, IH , level the devices switches off and restores normal system operation.
How to Order
For Standard Termination Finish Order As
TISP4xxxJ3BJR
Device TISP4xxxJ3BJ
Package SMB (DO-214AA)
Carrier Embossed Tape Reeled
For Lead Free Termination Finish Order As
TISP4xxxJ3BJR-S
Marking Code 4xxxJ3
Std. Qty. 3000
Insert xxx value corresponding to device name.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex JULY 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
Rating '4290 Repetitive peak off-state voltage Non-repetitive peak on-state pulse current (see Notes 1 and 2) 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 10/160 (TIA-968-A (Replaces FCC Part 68), 10/160 voltage wave shape) 4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 5/320 (TIA-968-A (Replaces FCC Part 68), 9/720 voltage wave shape, single) 10/560 (TIA-968-A (Replaces FCC Part 68), 10/560 voltage wave shape) 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) Non-repetitive peak on-state current (see Notes 1 and 2) 50 Hz, 1 cycle 60 Hz, 1 cycle Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 50 A Junction temperature Storage temperature range diT/dt TJ Tstg ITSM 80 100 800 -40 to +150 -65 to +150 A/s C C A IPPSM 1000 800 400 370 350 350 250 200 A '4350 '4395 VDRM Symbol Value 220 275 320 V Unit
NOTES: 1. Initially, the device must be in thermal equilibrium with TJ = 25 C. 2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its initial conditions.
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted)
Parameter IDRM Repetitive peak offstate current AC breakover voltage VD = V DRM Test Conditions TA = 25 C TA = 85 C '4290 V(BO) dv/dt = 250 V/ms, RSOURCE = 300 '4350 '4395 dv/dt 1000 V/s, Linear voltage ramp, V(BO) Ramp breakover voltage Maximum ramp value = 500 V di/dt = 20 A/s, Linear current ramp, Maximum ramp value = 10 A V(BO) I(BO) IH dv/dt Impulse breakover voltage Breakover current Holding current Critical rate of rise of off-state voltage 2/10 wave shape, IPP = 1000 A, RS = 2.5 , (see Note 3) dv/dt = 250 V/ms, RSOURCE = 300 150 5 '4290 '4350 '4395 '4290 '4350 '4395 320 386 434 600 mA mA kV/s V Min Typ Max 5 10 290 350 395 303 364 409 V V Unit A
IT = 5 A, di/dt = +/-30 mA/ms Linear voltage ramp, Maximum ramp value < 0.85 VDRM
JULY 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted)
Parameter ID Off-state current VD = 50 V f = 1 MHz, f = 1 MHz, Coff Off-state capacitance f = 1 MHz, f = 1 MHz, f = 1 MHz, NOTE Vd = 1 V rms, VD = 0 Vd = 1 V rms, VD = -1 V Vd = 1 V rms, VD = -2 V Vd = 1 V rms, VD = -50 V Vd = 1 V rms, VD = -100 V Test Conditions TA = 85 C 105 95 90 42 35 Min Typ Max 10 125 115 105 50 40 pF Unit A
3: Dynamic voltage measurements should be made with an oscilloscope with limited band width (20 MHz) to avoid high frequency noise.
Thermal Characteristics
Parameter RJA NOTE Junction to free air thermal resistance (see Note 4) Test Conditions EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 C, Min Typ Max 90 Unit C/W
4: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JULY 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Parameter Measurement Information
+i IPPSM Quadrant I Switching Characteristic
ITSM IT VT IH I(BO) V(BO)
-v IDRM
V DRM
VD
ID ID VD V DRM
IDRM +v
I(BO) V(BO)
IH VT IT ITSM
Quadrant III Switching Characteristic IPPSM -i
PM4XAG
Figure 1. Voltage-Current Characteristic for Terminals T and R All Measurements are Referenced to Terminal T
JULY 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT vs JUNCTION TEMPERATURE
100 VD = 50 V
TC4JAG
1.15
NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4JAF
Normalized Breakover Voltage
10 |I D| - Off-State Current - A
1.10
1
1.05
0.1
1.00
0.01 0
0.95
0.001 -25 0 25 50 75 100 TJ - Junction Temperature - C 125 150
0.90 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
Figure 2.
Figure 3.
ON-STATE CURRENT vs ON-STATE VOLTAGE
400 300 200 150 IT - On-State Current - A 100 70 50 40 30 20 15 10 7 5 4 3 2 1.5 1 0.7
0.4
TC4JAA
2.0
NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4JAD
TA = 25 C tW = 100 s
Normalized Holding Current 1.5
1.0 0.9 0.8 0.7 0.6 0.5
1
1.5 2 3 45 7 V T - On-State Voltage - V
10
15
-25
0 25 50 75 100 125 TJ - Junction Temperature - C
150
Figure 4.
JULY 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
Figure 5.
TISP4xxxJ3BJ Overvoltage Protector Series
Typical Characteristics
NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE TC4JABB
1 0.9 0.8 Capacitance Normalized to VD = 0 0.7 0.6 0.5 0.4 TJ = 25 C V d = 1 Vrms
DIFFERENTIAL OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE
90
TC4JAE
80
70
C = Coff(-2 V) - Coff(-50 V)
60
0.3
50
0.2 0.5
1
2
3 5 10 20 30 50 V D - Off-state Voltage - V
100150
40 50
60 70 80 90100 150 200 250 300 350 VDRM - Repetitive Peak Off-State Voltage - V
Figure 6.
Figure 7.
NORMALIZED CAPACITANCE ASYMMETRY vs OFF-STATE VOLTAGE
2.5 Normalized Capacitance Asymmetry - %
TC4JCC
Vd = 10 mV rms, 1 MHz 2.0
1.5
1.0
Vd = 1 V rms, 1 MHz
0.5
0.0 0.5 0.7 1
2 3 4 5 7 10 20 VD -- Off-State Voltage -- V
30 4050
Figure 8.
JULY 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Rating and Thermal Characteristics
NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION
ITSM(t) - Non-Repetitive Peak On-State Current - A 40 30 20 15 10 9 8 7 6 5 4 3 2 0.1 1
TI4JAA
V DRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE
1.00
V GEN = 600 Vrms, 50/60 Hz RGEN = 1.4*V GEN /ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 C
0.99
0.98 Derating Factor
0.97
0.96
0.95
0.94
1
10 100 t - Current Duration - s
1000
0.93 -40 -35 -30 -25 -20 -15 -10 -5
0
5
10 15 20 25
TAMIN - Minimum Ambient Temperature - C
Figure 9.
Figure 10.
JULY 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Applications Circuits
Protection F1 R High current Fuse Th1
Ring Detector
Polarity Bridge Relay D1 D2 D3 D4 Hook Switch DC Sink D7 C2 T1 Signal
C1 R1 D5 D6
C3 R2
T TISP 4350J3BJ
OC1
Isolation Barrier
AI4MMABB
F1a T
Tx
F1b R
TISP4350J3BJ
F2a T
d.c. feed Rx
F2b R
TISP4350J3BJ
F1 & F2 = B1250T
AI4MMAB
"TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries.
JULY 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.

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